s m d ty p e m o s f e t 1 w w w . k e x i n . c o m . c n 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2 . 5 0 + 0 . 1 - 0 . 1 0 . 8 0 + 0 . 1 - 0 . 1 4 . 0 0 + 0 . 1 - 0 . 1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2 . 6 0 + 0 . 1 - 0 . 1 0 . 4 0 + 0 . 1 - 0 . 1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter 1. so urce 2. drai n 3. gate 1 1 2 3 1 gate 2 drain 3 source n-channel p ow er m osfet xp 161 features low on-state resist ance : rds (on) = 0.055 ( vgs = 4. 5v ) rds (on) = 0.095 ( vgs = 2. 5v ) rds (on) = 0.20 ( vgs = 1. 5v ) ultra high-spee d switching gate protect diode built-in driving voltage : 1.5v absolute maxim um rating s t a = 2 5 paramet er sym bol rating unit dra in to s ource voltage v dss 20 v gate to s ource voltage v gss 8 v dra in current (dc) i d 4 a dra in current(pu lse) i dp 16 a pow er dissi pation * p d 2 w chan nel tem pera ture t ch 150 storage tem pera ture t stg -55 to +150 * w hen im plem ented on a ceram ic pcb el ectrical character istics t a = 2 5 paramet er sym bol testc onditons min typ ma x unit dra in cut -off c urr ent i dss v ds =20v,v gs =0 10 a gate leakage curren t i gss v gs = 8v,v ds =0 10 a gate to s ource cutoff voltage v gs(off) v ds =10v,i d =1m a 0.5 1.2 v forw ard transfer admit tance y fs v ds =10v,i d =2a 10 s v gs =4.5v,i d =2a 0.042 0.055 v gs =2.5v,i d =2a 0.070 0.095 v gs =1.5v,i d =0.5a 0.12 0.20 input c apacitance c i ss 390 pf output capacit ance c o ss 210 pf rev erse transfer c apacitance c rss 90 pf turn- on delay ti m e t d(on ) 10 ns rise ti m e t r 15 ns turn- off delay ti m e t d(of f) 85 ns fall t im e t f 45 ns v ds =10v,v gs =0,f=1mh z i d =2a,v gs(on) =5v ,v dd =10v dra in to s ource on- st ate resis tance r ds(on)
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